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| SIEGET(R) 25 NPN Silicon RF Transistor Preliminary data * For high power amplifiers * Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz * Transition frequency fT > 17 GHz * Gold metalization for high reliability * SIEGET (R) 25 - Line Siemens Grounded Emitter Transistor 25 GHz fT - Line BFP 490 4 5 3 2 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 490 Marking Ordering Code AOs Q62702-F1721 Pin Configuration 1=B 2=E 3=C 4=C 5=E Package SCT-595 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S 85 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Symbol Value 4.5 15 1.5 600 60 1000 150 -65 ...+150 -65 ...+150 Unit V VCEO VCBO VEBO IC IB Ptot Tj TA Tstg RthJS mA mW C 65 K/W 1) TS is measured on the emitter lead at the soldering point mounted on alumina 15 mm x 16,7 mm x 0.7 mm Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 490 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 200 mA, V CE = 3 V AC characteristics Transition frequency IC = 300 mA, VCE = 3 V, f = 0.2 GHz IC = 300 mA, VCE = 3 V, f = 0.5 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 100 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain 2) IC = 200 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 200 mA, VCE = 2 V, f = 0.5 GHz, ZS = ZL = 50 Third order intersept point IC = 300 mA, VCE = 3 V, ZS=ZSopt , ZL=ZLopt , f = 1.8 GHz 1dB Compression point IC = 300 mA, VCE = 3 V, f = 1.8 GHz, ZS=ZSopt , ZL=ZLopt Unit max. 1800 400 V nA A - typ. 5 90 V(BR)CEO I CBO I EBO hFE 4.5 50 fT 13 17.5 15 3.7 6.3 10.5 3.3 4.7 - GHz Ccb Cce Ceb F pF dB Gma - 9 - dB |S21|2 - 8.5 - IP3 - 35 - dBm P-1dB - 26.5 - 2) Gma = |S21 / S12| (k-(k2-1)1/2) Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BFP 490 Common Emitter S-Parameters f GHz MAG S11 ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG V CE = 2V, IC = 150mA 0.01 0.1 0.3 0.5 0.9 1 1.5 2 3 0.648 0.916 0.921 0.92 0.921 0.919 0.928 0.926 0.924 -159.8 -178.5 173.7 168.2 159.1 157 147.1 138.8 122.8 75.95 12.96 4.28 2.52 1.36 1.22 0.8 0.61 0.43 144.1 94.9 83.7 77.3 68.1 65.7 55.6 47.1 29.1 0.0053 0.0095 0.0133 0.0188 0.0295 0.0321 0.045 0.0574 0.0811 53.8 25.5 43.6 51.9 56.1 55.7 52.7 48.1 36.6 0.7723 0.8743 0.8761 0.8777 0.8825 0.9944 0.8861 0.8878 0.884 -77.6 -167.1 -179.6 175.7 169.5 168.2 162.5 157.7 146.7 V CE = 2V, IC = 300mA 0.01 0.1 0.3 0.5 0.9 1 1.5 2 3 0.7274 0.9158 0.9215 0.9193 0.9224 0.9201 0.9373 0.9265 0.9204 -172.3 -179.6 173.1 167.9 158.9 156.7 147 138.6 122.7 63.82 14.24 4.735 2.788 1.515 1.358 0.891 0.672 0.47 153.8 98.6 85.3 78.7 69.8 67.5 57.7 49.4 31.7 0.003 0.007 0.0119 0.0179 0.0294 0.0324 0.0454 0.0581 0.0819 38.4 34.6 53.6 59.4 60.8 59.8 55.5 50.3 37.9 0.4321 0.8696 0.8834 0.8879 0.892 0.8952 0.8953 0.8968 0.8928 -91.1 -167 -179.5 175.8 169.5 168.1 162.2 157.5 146.5 For more and detailed S- parameters please contact your local Siemens distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 33 Sep-09-1998 1998-11-01 BFP 490 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.451 24.665 1.9962 16.035 1.339 2.1262 1.227 3.9147 3.2793 0.9832 1.115 0 0 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 114.96 0.76939 21.04 0.090033 1.0754 0.32476 0.93266 0.61664 0 0.34153 0 0 0.75835 A A V deg F - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.1472 1.1591 1.3531 3.7479 0.17683 0.10737 0.36885 0.27348 6.12521 0.3 0 1.11 300 pA A mA V fF V eV K C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = tbd fA N= tbd - RS = tbd All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: C CB L BI = L BO = L CI C'-E'Diode 0.85 0.3 0.15 0.04 0.39 0.2 150 2.2 500 nH nH nH nH nH nH fF fF fF L BO B L BI B' Transistor Chip E' C' L CO C L EI = L EO = L CI = L CO = C BE = C CB = C CE = EHA07389 C BE L EI C CE L EO E Valid up to 3GHz The SOT-595 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitentechnik (IMST) (c) 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44 Sep-09-1998 1998-11-01 BFP 490 For non-linear simulation: * Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. * If you need simulation of thereverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. * Simulation of package is not necessary for frequenties < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: * This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: * Higher gain because of lower emitter inductance. * Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. The AC characteristics are verified by random sampling. Semiconductor Group Semiconductor Group 55 Sep-09-1998 1998-11-01 BFP 490 Total power dissipation P tot = f (T A*, TS) * Package mounted on epoxy Transition frequency fT = f (IC) f = 200 MHz VCE = parameter in V 20 GHz 3 1 1200 mW 1000 900 16 0.5 P tot 800 700 600 500 400 TS fT TA 120 C 14 12 10 8 6 300 4 200 100 0 0 20 40 60 80 100 150 2 0 0 50 100 150 200 250 300 350 400 mA 500 TA,TS IC Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 10 2 K/W - RthJS Pmax / PDC 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 66 Sep-09-1998 1998-11-01 BFP 490 Power gain G ma, G ms, |S 21|2 = f (f) VCE = 2 V, I C = 200 mA Power gain Gma, Gms = f (I C) VCE = 2V f = parameter in GHz 24 dB 48 dB 20 36 32 28 18 16 0.5 0.8 1 G 24 20 16 12 8 4 0 -4 -8 -12 0 G Gms 14 12 10 8 1.8 2 2.5 Gma 6 4 |S21 |2 1 2 3 4 5 GHz 2 7 0 0 50 100 150 200 250 300 350 400 mA 500 f IC Power gain G ma,Gms = f (VCE) I C=200mA Collector-base capacitance Ccb = f (VCB) VBE = 0, f = 1MHz 10 f = parameter in GHz 26 dB 22 0.5 pF 20 18 G 16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V 0.8 1 Ccb 6 1.8 2 2.5 4 2 4.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0 VCE VCB Semiconductor Group Semiconductor Group 77 Sep-09-1998 1998-11-01 BFP 490 Noise figure F = f (IC) VCE = 2 V, ZS = Z Sopt 6.5 dB 5.5 5.0 4.5 F 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 f = 0.45 GHz f = 0.9 GHz f = 1.8 GHz 50 100 150 200 250 300 350 400 mA 500 IC Semiconductor Group Semiconductor Group 88 Sep-09-1998 1998-11-01 |
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